Rainer Kurps: search on Z-Library

The world's largest scientific articles store. 70,000,000+ articles for free.

Don't use scam websites

1

B atomic layer doping of Ge

Yuji Yamamoto, Klaus Köpke, Rainer Kurps, Junichi Murota, Bernd Tillack

Journal:

Thin Solid Films

Year:

2010

Language:

english

File:

PDF, 499 KB

english, 2010

2

Arsenic atomic layer doping in Si using AsH3

Yamamoto, Yuji, Kurps, Rainer, Murota, Junichi, Tillack, Bernd

Journal:

Solid-State Electronics

Year:

2015

Language:

english

File:

PDF, 910 KB

english, 2015

3

Selective vapor phase etching of SiGe by HCl in a RPCVD reactor

Yuji Yamamoto, Klaus Köpke, Rainer Kurps, Bernd Tillack

Journal:

Applied Surface Science

Year:

2008

Language:

english

File:

PDF, 378 KB

english, 2008

4

P doping control during SiGe:C epitaxy

Yuji Yamamoto, Bernd Tillack, Klaus Köpke, Rainer Kurps

Journal:

Thin Solid Films

Year:

2006

Language:

english

File:

PDF, 125 KB

english, 2006

5

Deconvolution of narrow boron SIMS depth profiles in Si and SiGe

Frank Herzel, Karl-Ernst Ehwald, Bernd Heinemann, Dietmar Krüger, Rainer Kurps, Wilfried Röpke, Hans-Peter Zeindl

Journal:

Surface and Interface Analysis

Year:

1995

Language:

english

File:

PDF, 648 KB

english, 1995

6

Phosphorus atomic layer doping in Ge using RPCVD

Yamamoto, Yuji, Kurps, Rainer, Mai, Christian, Costina, Ioan, Murota, Junichi, Tillack, Bernd

Journal:

Solid-State Electronics

Year:

2013

Language:

english

File:

PDF, 357 KB

english, 2013

7

SiGe p-n-p HBTs With 265-GHz fmax, 175-GHz fT, and 3.65-ps Gate Delay

Heinemann, Bernd, Rucker, Holger, Barth, Rainer, Drews, Jurgen, Fursenko, Oksana, Grabolla, Thomas, Kurps, Rainer, Marschmeyer, Steffen, Scheit, Alexander, Schmidt, Detlef, Trusch, Andreas, Wolansky,

Journal:

IEEE Electron Device Letters

Year:

2014

Language:

english

File:

PDF, 1.01 MB

english, 2014

8

[IEEE 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Berkeley, CA, USA (2012.06.4-2012.06.6)] 2012 International Silicon-Germanium Technology and Device Meeting (ISTDM) - Phosphorus Atomic Layer Doping in Ge Using RPCVD

Yamamoto, Yuji, Kurps, Rainer, Mai, Christian, Costina, Ioan, Murota, Junichi, Tillack, Bernd

Year:

2012

Language:

english

File:

PDF, 203 KB

english, 2012

9

[IEEE 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Singapore, Singapore (2014.6.2-2014.6.4)] 2014 7th International Silicon-Germanium Technology and Device Meeting (ISTDM) - Arsenic atomic layer doping in Si using AsH3

Yamamoto, Yuji, Kurps, Rainer, Murota, Juichi, Tillack, Bernd

Year:

2014

Language:

english

File:

PDF, 118 KB

english, 2014

10

[ECS 210th ECS Meeting - Cancun, Mexico (October 29-November 3, 2006)] ECS Transactions - Dopant Diffusion in SiGeC Alloys

Rucker, Holger, Heinemann, Bernd, Kurps, Rainer, Yamamoto, Yuji

Year:

2006

Language:

english

File:

PDF, 226 KB

english, 2006